| Se离子束辅助沉积CIS过程的数值分析 |
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| 引用本文： | 李学磊,冯煜东,王志民,王艺,赵慨,速小梅. Se离子束辅助沉积CIS过程的数值分析[J]. 真空与低温, 2014, 0(3): 150-153 |
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| 作者姓名： | 李学磊 冯煜东 王志民 王艺 赵慨 速小梅 |
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| 作者单位： | 兰州空间技术物理研究所表面工程技术重点实验室,甘肃兰州730000 |
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| 基金项目： | 重点实验室基金项目：9140C540401110C5401 |
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| 摘 要： | 通过研究连续Se离子束辅助磁控溅射技术,在柔性聚酰亚胺基底上沉积形成CIS薄膜的过程,建立了相应的薄膜沉积模型。在此基础上,以离子注入深度效应作为研究对象,从扩散均匀性角度进行模拟计算,并与传统气相原子沉积方法进行比较。通过比较分析,计算出Se扩散均匀性为90%时,采用离子束辅助沉积所需的衬底温度明显低于气相原子沉积所需的衬底温度。
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| 关 键 词： | 离子束辅助沉积 CIS 低温沉积 模拟 |
THE SIMULATION OF Se ION BEAM ASSISTED DEPOSITION OF CIS FILMS |
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| LI Xue-lei,FENG Yu-dong,WANG Zhi-min,WANG Yi,ZHAO Kai,SU Xiao-mei. THE SIMULATION OF Se ION BEAM ASSISTED DEPOSITION OF CIS FILMS[J]. Vacuum and Cryogenics, 2014, 0(3): 150-153 |
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| Authors: | LI Xue-lei FENG Yu-dong WANG Zhi-min WANG Yi ZHAO Kai SU Xiao-mei |
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| Affiliation: | ( Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Space Technology and Physics, Lanzhou Gansu 730000, China) |
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| Abstract: | Based on the formation of CIS thin film on a flexible polyimide substrate by Se Ion Beam Assisted Magnetron sputtering technology,a model of the deposit is established. By comparing with the method of conventional gas phase atomic deposition,using ion implantation depth effect as the research object,a calculation method from the perspective of diffusion uniformity is put forward. Through comparison and analysis,when the Se diffusion uniformity is 90%,the substrate temperature needed for ion beam assisted deposition was significantly lower than the substrate temperature needed for gas phase atomic deposition. |
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| Keywords: | IBAD CIS low temperature deposition simulated |
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