Simulation of interconnect inductive impact in the presence of process variations in 90 nm and beyond

The on-chip inductive impact on signal integrity has been a problem for designs in deep-submicrometer technologies. The inductive impact increases the clock skew, max timing, and noise of bus signals. In this letter, circuit simulations using silicon-validated macromodels show that there is a significant inductive impact on the signal max timing (/spl sim/ 10% pushout versus RC delay) and noise (/spl sim/2/spl times/RC noise). In nanometer technologies, process variations have become a concern. Results show that device and interconnect process variations add /spl sim/ 3% to the RLC max-timing impact. However, their impact on the RLC signal noise is not appreciable. Finally, inductive impact in 65- and 45-nm technologies is investigated, which indicates that the inductance impact will not diminish as technology scales.