| InP系波导和光电探测器的单片集成器件制作 |
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| 引用本文： | 吕章德,杨易,程宗权. InP系波导和光电探测器的单片集成器件制作[J]. 光学仪器, 1999, 0(2) |
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| 作者姓名： | 吕章德 杨易 程宗权 |
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| 作者单位： | 浙江绍兴文理学院物理系，中科院上海冶金研究所 |
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| 摘 要： | 报道了应用液相外延（ＬＰＥ）方法，制作了ＩｎＰ／ＩｎＧａＡｓＰ／ＩｎＧａＡｓ半导体光波导和ＩｎＧａＡｓ－ＰＩＮ光电探测器的单片集成器件，器件性能的几个主要参数与国外的同类器件相近
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| 关 键 词： | 光波导，PIN探测器，光电集成电路（OEIC） |
The Fabrication of Monolithic Integration of InP Optical Waveguide and Photodetector |
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| LU Zhangde. The Fabrication of Monolithic Integration of InP Optical Waveguide and Photodetector[J]. Optical Instruments, 1999, 0(2) |
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| Authors: | LU Zhangde |
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| Abstract: | The fabrication of monolithic integration of InP/InGaAsP/InGaAs semiconductor optical waveguide and InGaAs PIN photodetector using liquid phase epitaxy(LPE) method is reported. The principal paraneters representing the performance of this device are closed to the level of foreign devices. |
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| Keywords: | Optical Waveguide PIN Photodetector OEIC |
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