Investigation on resonant tunneling in GaAs/AlxGa1-xAs DBD using tunneling spectroscopy |
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| Authors: | Chen Hongyi K L Wang |
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| Affiliation: | (1) Institute of Microelectronics, Tsinghua University, 100084 Beijing;(2) Device Research Laboratory, Electrical Engineering Department, University of California at Los Angeles, 90024 Los Angeles, CA, U.S.A. |
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| Abstract: | Experimental investigation on resonant tunneling in various GaAs/AlxGa1-xAs double barrier single well structures has, been performed by using tunneling spectroscopy at different temperatures. The
results show that in addition to resonant tunneling via GaAs well state confined by AlxGa1-xAs Γ-point barrier there exists resonant tunneling via GaAs well state confined by AlxGa1-xAsX-point barrier forboth indirect (x>0.4) and direct (x<0.4) cases. |
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| Keywords: | Resonant tunneling Quantum well Energy band profile |
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