具有动态控制阳极短路结构的高速IGBT

利用动态控制阳极短路的基本原理，提出了一种实现高速IGBT的新思路．该结构的关键是引入了一个常开型p MOSFET，在IGBT导通时关断，不增加导通损耗，而在器件关断过程中能阻止阳极继续向漂移区注入少数载流子，同时为载流子流入阳极提供一条通道，使其快速关断．理论分析和模拟结果证明，该结构在击穿电压、导通损耗不变的情况下，能将关断时间减少75%以上．应用这样的结构只需增加两个分压比一定的分压电阻．新结构对驱动电路的要求与普通IGBT完全一致，是一种实用的高速IGBT结构．

A High Speed IGBT Based on Dynamic Controlled Anode-Short

IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when it is in on- state since the channel of the p- MOSFET is pinched- off.During the course of turning off,the channel of the p- MOSFET will prevent the injection of m inorities and introduce an extra access for the carriers to flow to the anode directly,which m akes the IGBT reach its off- state in a shorter time.The simulation results prove that the new structure can reduce the turn- off time by m ore than75 % compared with the normal one under the same break- down voltage and on- state perform ance.Only two more resistors are needed when using this structure,and the re- quirement of the drive circuits is just the sam e as normal.