Characterization of boron-doped micro- and nanocrystalline diamond films deposited by wafer-scale hot filament chemical vapor deposition for MEMS applications |
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Authors: | Jingchun Zhang Jerry W. Zimmer Roger T. Howe Roya Maboudian |
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Affiliation: | 1. Department of Chemical Engineering, University of California, Berkeley, CA 94720, United States;2. sp3 Diamond Technologies, 2220 Martin Ave., Santa Clara, CA 95050, United States;3. Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States |
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Abstract: | Micro- and nanocrystalline diamond (MCD and NCD) films are deposited on 4-inch silicon substrates by a large-area multi-wafer-scale hot filament chemical vapor deposition (HFCVD) system. The films are in-situ doped by boron. The chemical and crystalline structures are studied by electron probe microanalysis (EPMA), Raman spectroscopy and X-ray diffraction (XRD). The microcrystalline films have a preferred (111) texture, while the nanocrystalline films exhibit (220) texture. Strain gauges and cantilever beam arrays are micro-fabricated by surface micro-machining techniques to characterize the residual strain and strain gradient of the diamond films. Both micro- and nanocrystalline films have small compressive strains of − 0.052% and − 0.040% respectively, with the strain gradient of about 10− 5 μm− 1. These values are low enough to enable the realization of many MEMS devices. |
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