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Atomically flat diamond (111) surface formation by homoepitaxial lateral growth |
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| Authors: | Norio Tokuda Hitoshi Umezawa Sung-Gi Ri Masahiko Ogura Kikuo Yamabe Hideyo Okushi Satoshi Yamasaki |
| Affiliation: | 1. Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568, Japan;2. Diamond Research Center, AIST, 1-1-1 Umezono, Tsukuba 305-8568, Japan;3. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Corporation (JST), Japan;4. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8573, Japan;5. Tsukuba Research Center for Interdisciplinary Materials Science (TIMS), University of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8571, Japan |
| Abstract: | A process of homoepitaxial growth of diamond (111) films by microwave plasma-enhanced chemical vapor deposition has been investigated characterizing areas by ex-situ atomic force microscopy. The evolution of surface morphology during a lateral growth of (111) diamond was visualized utilizing a mesa structure as a marker. Lateral growth forms atomically flat surfaces, which show atomically flat terraces over several hundred nm widths and single bilayer steps of (111) diamond. |
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