Effect of surface treatments on the electronic properties of ultra-nanocrystalline diamond films |
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| Authors: | C.L. Dong S.S. Chen J.W. Chiou Y.Y. Chen J.-H. Guo H.F. Cheng I.N. Lin C.L. Chang |
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| Affiliation: | 1. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, R.O.C.;2. Department of Physics, Tamkang Univeristy, Tamsui 25137, Taiwan, R.O.C.;3. Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720.;4. China College of Marine Technology and Commerce, Taiwan, R.O.C.;5. National Taiwan Normal University, Taipei, Taiwan, R.O.C. |
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| Abstract: | We present the soft x-ray spectroscopic study of the ultra-nanocrystalline diamond (UNCD) films with different surface treatments. The samples were prepared by means of microwave plasma enhanced chemical vapor deposition (MPECVD) and the different surface treatments are applied to alter their field emission properties. The electronic properties were subsequently examined by the soft x-ray absorption and x-ray emission spectroscopy at carbon 1s threshold. From the experimental results, there is no significant variation in electronic structure of oxygen- and hydrogen-plasma treated UNCD films. On the other hand, the biased treated UNCD film shows more remarkable change on the sp2 and sp3 states. The formation of sp2 bonding and the reduction of sp3 bonding are the consequence of the improved electron field emission properties. |
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