Area dependence of TDDB characteristics for HfO/sub 2/ gate dielectrics |
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| Authors: | Young Hee Kim Onishi K. Chang Seok Kang Hag-Ju Cho Nieh R. Gopalan S. Choi R. Jeong Han Krishnan S. Lee J.C. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA; |
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| Abstract: | Weibull slopes, area scaling factors, and lifetime projection have been investigated for both soft breakdown and hard breakdown for the first time, in order to gain a better understanding of, the breakdown mechanism of HfO/sub 2/ gate dielectrics. The Weibull slope /spl beta/ of the hard breakdown for both the area dependence and the time-to-dielectric-breakdown distribution was found to be /spl beta/ = 2, whereas that of the soft breakdown was about 1.4. Estimated ten-year lifetime has been projected to be -2 V. |
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