InP/InGaAs double heterostructure bipolar transistors grown by MBE |
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| Authors: | Schuitemaker P. Claxton P.A. Roberts J.S. Plant T.K. Houston P.A. |
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| Affiliation: | University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK; |
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| Abstract: | Double heterostructure bipolar transistors have been fabricated on InP/InGaAs MBE material. Current gains of up to 80 have been observed in the emitter-up configuration. The devices were fabricated using two diffusion techniques and selective etching to contact the base. |
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