Phase reaction and diffusion path of the SiC/Ti system |
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| Authors: | M Naka J C Feng J C Schuster |
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| Affiliation: | (1) the Joining and Welding Research Institute, Osaka University, 567 Osaka, Japan;(2) National Key Laboratory, Advanced Welding Production Technology, Harbin Institute of Technology, 150001 Harbin, Harbin, People’s Republic of China;(3) Present address: the Institute of Physical Chemistry, University of Vienna, A-1090 Vienna, Austria |
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| Abstract: | Bonding of SiC to SiC was conducted using Ti foil at bonding temperatures from 1373 to 1773 K in vacuum. The total diffusion path between SiC and Ti was investigated in detail at 1673 K using Ti foil with a thickness of 50 µm. At a bonding time of 0.3 ks, TiC at the Ti side and a mixture of Ti5Si3C x and TiC at the SiC side were formed, yielding the structure sequence of β-Ti/Ti+TiC/Ti5Si3C x +TiC/SiC. Furthermore, at the bonding time of 0.9 ks, a Ti5Si3C x layer phase appeared between SiC and the mixture of Ti5Si3C x and TiC. Upon the formation of Ti3SiC2 (T phase) after the bonding time of 3.6 ks, the complete diffusion path was observed as follows: β-Ti/Ti+TiC/Ti5Si3C x +TiC/Ti5Si3C x /Ti3SiC2/SiC. The activation energies for growth of TiC, Ti5Si3C x , and Ti3SiC2 were 194, 242, and 358 kJ/mol, respectively. |
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