Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy |
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| Authors: | P.K. Ooi S.C. LeeS.S. Ng Z. HassanH. Abu Hassan W.L. Chen |
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| Affiliation: | a Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800, Penang, Malaysiab Department of Electronic Engineering, National Changhua University of Education, 500, Taiwan, ROC |
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| Abstract: | Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements. |
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| Keywords: | InN Polarization Infrared reflectance Anisotropic dielectric function model |
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