Reduced oxide charge trapping and improved hot-electron reliabilityin submicrometer MOS devices fabricated by titanium salicideprocess

The effects of the titanium salicide (self-aligned silicide) process on the reliability of very-thin-gate-oxide MOSFETs have been studied. It is shown that the titanium salicide process, as compared to the conventional poly-Si gate process, has reduced electron and hole trapping in the oxide and improved hot-electron reliability. It is shown that these phenomena are related to the reduced hydrogen content in the oxide as revealed by a secondary ion mass spectrometry (SIMS) analysis