Microelectronics Department, Centro de Estudios e Investigaciones Técnicas de Giapúzcoa (CEIT), PO Box 1555, E-20009, San Sebastian, Spain
Abstract:
A pressure microsensor for working at high temperature has been developed. The device consists of a tantalum nitride thin film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized silicon wafers with an aluminium interconnection layer and a silicon dioxide passivation. The microsensors present a low temperature coefficient of resistance and good long-term stability. The sensitivity is 0.15 mV (V bar)?1 with low sensitivity drift and low combined non-linearity and hysteresis in the pressure range 0–10 bar.