Longwave generation in laser structures based on InGaAs(N) quantum wells on GaAs substrates |
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| Authors: | V. A. Odnoblyudov A. Yu. Egorov A. R. Kovsh V. V. Mamutin E. V. Nikitina Yu. M. Shernyakov M. V. Maksimov V. M. Ustinov |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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| Abstract: | The MBE growth regime has been optimized for the obtaining of laser structures based on InGaAs(N)/GaAs quantum wells (QWs) with high indium content. Structures containing InGaAs and InGaAsN isolated QWs exhibit low-threshold longwave emission at room temperature. Lasers based on QWs of the In0.35GaAs and In0.35GaAsN0.023 types are characterized by the radiation wavelengths λ=1.085 and 1.295 μm at a threshold current density of 60 and 350 A/cm2, respectively. |
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