薄片划片微损伤与芯片断裂强度探讨

超薄圆片的减薄、划片技术是集成电路封装小型化的关键基础工艺技术，随着减薄后化学机械抛光（CMP）、旋转腐蚀、干法刻蚀或干法抛光等释放应力技术被广泛采用，减薄造成的圆片背面损伤几乎为零，所以划片造成的微损伤对芯片断裂强度的影响变得越来越突出。本文分析了影响芯片断裂强度的主要原因，对薄片划片微损伤的来源、危害及解决方法进行了探讨。同时，着重介绍了一种新的激光划片方式，即喷水波导激光（LMJ）划片法。

Study on Microdamage of Thin Wafer Sawing and Die Break Strength

Uhrathin wafer grinding and sawing are the key and basic technology to small outline IC. With the technology of stress release after wafer grinding widely used, such as chemical mechanical polish （CMP）, rotational corrosion, dry etch, dry polish, etc., zero defect on wafer backside is nearly attained, so the impact on die break strength caused by sawing microdamage is getting more and more obvious. This article analyses the main causes leading to the impact on die break strengh, discusses the source, effect and solution of the microdamage of thin wafer sawing, and introduces a new laser sawing method, also known as the Laser Micro Jet （LMJ）.