| 锗硅表面结构和动态过程的STM研究 |
| |
| 引用本文： | 盖峥,杨威生. 锗硅表面结构和动态过程的STM研究[J]. 电子显微学报, 2000, 19(2): 104-112 |
| |
| 作者姓名： | 盖峥 杨威生 |
| |
| 作者单位： | 北京大学物理系人工微结构与介观物理实验室,北京 |
| |
| 摘 要： | 本文综述了我们利用扫描隧道显微镜和低能电子衍射对锗硅表面结构和动态过程进行了系统化和比较性的研究。研究结果除了具有重要的基础意义外，对半导体异上延生长衬底选择以及量子线和量子点自组织生长模板的选择都有指导意义。
|
| 关 键 词： | STM 锗 硅 表面结构 动态过程 半导体 |
STM investigation of the atomic structures and dynamic processes of germanium and silicon surfaces |
| |
| GAI Zheng YANG Wei|sheng. STM investigation of the atomic structures and dynamic processes of germanium and silicon surfaces[J]. Journal of Chinese Electron Microscopy Society, 2000, 19(2): 104-112 |
| |
| Authors: | GAI Zheng YANG Wei|sheng |
| |
| Abstract: | By means of scanning tunneling microscopy we have been carrying out a systematic and comparative investigation on the stability,faceting,nanofaceting,and atomic structure of high|index germanium and silicon surfaces,along with some surface dynamic processes.The major results are reviewed in the present paper.The results are expected to have not only basic scientific importance but also application potential in semiconductor industry and nanotechnology. |
| |
| Keywords: | scanning tunneling microscopy (STM) germanium silicon high|index surface surface structure dynamic process |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
