Fabrication of Textured Silicon Carbide via Seeded Anisotropic Grain Growth

Highly textured silicon carbide was fabricated via anisotropic grain growth. Large, platelike grains were grown from a fine-grained sintered matrix which had been seeded with ≤2% SiC platelets. The seeds were initially incorporated with preferred orientation during the green-state forming process and this resulted in oriented growth of the platelike grains. The development of texture in the samples was evident from microstructure observations and X-ray diffraction analysis.