三方晶硒纳米线的大面积合成及其场效应晶体管特性

采用液相反应成功制备了高质量硒纳米线。利用透射电镜（TEM）、高分辨透射电镜（HRTEM）以及X射线衍射仪（XRD）研究了纳米的形貌结构特征。结果表明,硒纳米线为单晶结构,生长方向沿001]面,平行于螺旋轴。结合光刻技术及磁控溅射镀膜技术,成功制备了硒纳米线场效应晶体管器件。初步测试表明,这种硒纳米线为p型半导体。

FABRICATION OF TRIGANOL Se NANOWIRES AND ITS FIELD EFFECT TRANSISTOR PROPERTIES

We prepared triganol Se nanowires （NWs） by a chemical solution process, Transmission Electron Microscopy （TEM）, High ResolutionTEM （HRTEM） and X-Ray Diffraction （XRD） were used to characterize the morphology and structural characterization of the Se NWs. The results show that the Se NWs are single crystalline and grow along the c-axis, the direction parallel to the helical chains of Se atoms. Single Se NW field effect transistor （FET） devices were prepared through photolithographic patterning. Our research indicates that the single Se NW device is p-type semiconductors. This finding on the Se NW FETs have broad implications and provide very useful fundamental information necessary for future applications in the fabrication of high quality NW FETs and other electronic devices.