| 基于黑硅为吸收层的热电堆红外探测器 |
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| 引用本文： | 夏燕,薛晨阳,欧文,袁锋,赵利俊. 基于黑硅为吸收层的热电堆红外探测器[J]. 仪表技术与传感器, 2012, 0(3): 11-14 |
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| 作者姓名： | 夏燕 薛晨阳 欧文 袁锋 赵利俊 |
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| 作者单位： | 1. 中北大学电子测试国家重点实验室,山西太原,030051
2. 中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 国家863重大项目(2006AA040101) |
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| 摘 要： | 基于黑硅对部分波长红外光的高吸收效率,结合红外探测器对吸收层材料的要求,针对以黑硅为红外吸收层的设计与测试进行了研究;设计采用工艺中刻蚀出现的"黑色"物质为吸收层材料,研究对不同波长红外光的吸收效率。根据红外基本理论,结合MEMS工艺可行性和兼容性设计一种微机械热电堆红外探测器,热偶对的排布位置进行上下设计;突破原有的硅衬底的释放困难和SOI衬底的成本过高的问题,提出一种氧化层上的多晶硅作衬底,最后器件以正面干法释放器件的方法,在提高探测器性能的同时节约成本。
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| 关 键 词： | 黑硅 兼容性 热电堆 红外 MEMS |
Thermopile Infrared Detector Based on Black Silicon as Absorption |
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| XIA Yan , XUE Chen-yang , OU Wen , YUAN Feng , ZHAO Li-jun. Thermopile Infrared Detector Based on Black Silicon as Absorption[J]. Instrument Technique and Sensor, 2012, 0(3): 11-14 |
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| Authors: | XIA Yan XUE Chen-yang OU Wen YUAN Feng ZHAO Li-jun |
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| Affiliation: | 1.Key Laboratory of Instrumentation Science and Dynamic Measurement(North University of China), Taiyuan 030051,China;2.Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China) |
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| Abstract: | Considering the infrared detector’s demand for the absorption material,the design and text of black silicon is present as the surface layer for its high absorption of part wavelength of infrared light.This paper researched on black silicon’s absorption rate for different wavelengths of infrared light.According to the IR basic theory,feasibility and compatibility iqn MEMS process,a type of MEMS thermopile infrared detector was designed with the two materials in thermocouple of detector placed on the single layer of SiO2 membrane vertically.Besides,the detector took polysilicon on SiO2 as the substrate to release devise by using XeF2 front dry etching in order to solve the difficulty when releasing the Si substrate and the high cost of SOI.The method can improve the performance of detector and reduce the cost. |
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| Keywords: | black silicon compatibility thermopile infrared MEMS |
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