| 双面静电封接工艺在硅电容传感器中的应用 |
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| 引用本文： | 张娜,李颖,张治国,祝永峰,董春华,殷波. 双面静电封接工艺在硅电容传感器中的应用[J]. 仪表技术与传感器, 2012, 0(1): 13-15 |
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| 作者姓名： | 张娜 李颖 张治国 祝永峰 董春华 殷波 |
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| 作者单位： | 沈阳仪表科学研究院,辽宁沈阳,110043 |
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| 摘 要： | 硅电容传感器由于其结构的精密性与灵敏性,常规的静电封接工艺已无法满足要求。封接后会造成其小间隙(间隙通常<10μm)极板间的粘连,导致器件失效。文中结合小间隙传感器的结构特点提出了一种双面同时封接的方法,并对封接相关参数进行了分析,确定了相应的封接条件。该工艺既解决了极板粘连问题又简化了工艺步骤,适合现阶段大规模生产的需求。
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| 关 键 词： | 硅电容传感器 小间隙 双面静电封接 |
Applications of Two-side Electrostatic Sealing in Silicon Capacitance Sensor |
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| ZHANG Na , LI Ying , ZHANG Zhi-guo , ZHU Yong-feng , DONG Chun-hua , YIN Bo. Applications of Two-side Electrostatic Sealing in Silicon Capacitance Sensor[J]. Instrument Technique and Sensor, 2012, 0(1): 13-15 |
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| Authors: | ZHANG Na LI Ying ZHANG Zhi-guo ZHU Yong-feng DONG Chun-hua YIN Bo |
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| Affiliation: | (Shenyang Academy of Instrument Science,Shenyang 110043,China) |
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| Abstract: | Because of its structural precision and sensitivity,the common electrostatic sealing technology can cause the adhesion between the plates of the silicon capacitance sensor,it would damage the device.A new two-side electrostatic sealing method was proposed.It is more suitable for the special structure of the small space sensor.And the factors which affect capacitance device sealing quality were also discussed.This new two-side electrostatic sealing technology is easy to implement and more practical for the mass production. |
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| Keywords: | Silicon capacitance sensor small space two-side electrostatic sealing |
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