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基于Ag-Sn焊片共晶键合的MEMS气密性封装
引用本文:陈继超,赵湛,刘启民,肖丽,杜利东.基于Ag-Sn焊片共晶键合的MEMS气密性封装[J].仪表技术与传感器,2012(6):6-7,28.
作者姓名:陈继超  赵湛  刘启民  肖丽  杜利东
作者单位:1. 中国科学院研究生院,北京100039;中国科学院电子学研究所传感技术国家重点实验室,北京100190
2. 中国科学院电子学研究所传感技术国家重点实验室,北京,100190
基金项目:国家重点基础研究发展计划(973计划)项目
摘    要:研究了在MEMS气密性封装中基于Ag-Sn焊片的共晶键合技术。设计了共晶键合多层材料的结构和密封环图形,在221℃实现了良好的键合效果,充N2保护的键合环境下,平均剪切强度达到9.4 MPa.三个月前后气密性对比实验表明氦泄漏不超过5×10-4Pa.cm3/s,满足GJB548B—2005标准规定,验证了Ag-Sn共晶键合技术在MEMS气密封装中应用的可行性。

关 键 词:共晶键合  气密封装  Ag-Sn焊片

Eutectic Bonding for MEMS Hermetic Packaging Based on Ag -Sn Solder Film
CHEN Ji-chao , ZHAO Zhan , LIU Qi-min , XIAO Li , DU Li-dong.Eutectic Bonding for MEMS Hermetic Packaging Based on Ag -Sn Solder Film[J].Instrument Technique and Sensor,2012(6):6-7,28.
Authors:CHEN Ji-chao  ZHAO Zhan  LIU Qi-min  XIAO Li  DU Li-dong
Affiliation:1(1.State Key Laboratory of Transducer Technology,Institute of Electronics,Chinese Academy of Sciences,Beijing 100190,China; 2.Graduate University,Chinese Academy of Sciences,Beijing 100190,China)
Abstract:This paper introduced the eutectic bonding technology in MEMS hermetic packaging based on Ag-Sn solder film.The structure of multi-layer material for eutectic bonding and the pattern of sealing rings were designed.A good bonding effect was realized in the N2 protecting environment at 221 ℃,and the average shear strength was 9.4 MPa.Helium leak rate is no more than 5×10-4 Pa·cm3/s in the comparative experiments through three months,which meets the GJB548B-2005 standard and verifies the feasibility of Ag-Sn eutectic bonding technology in MEMS hermetic packaging.
Keywords:eutectic bonding  hermetic packaging  Ag-Sn solder film
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