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基于电流镜积分的红外探测器读出电路设计
引用本文:夏建宝,单慧,戴珊珊,罗向东. 基于电流镜积分的红外探测器读出电路设计[J]. 电子器件, 2011, 34(1): 57-62. DOI: 10.3969/j.issn.1005-9490.2011.01.014
作者姓名:夏建宝  单慧  戴珊珊  罗向东
作者单位:南通大学江苏省专用集成电路设计重点实验室;
基金项目:江苏省高压LDMOS器件设计与集成项目资助(08KJA510002); 南通市K应用研究计划资助(K2008024)
摘    要:详细分析了电流镜积分(CMI)读出电路的工作原理、设计过程和CMI结构的噪声,并用CSMC 0.5μm CMOS工艺对所设计的电路进行仿真和版图设计,仿真结果表明CMI结构在电源电压为5 V,积分电容为2 pF时能提供一个较大的电荷存储能力(6.25x107个电子);在光生电流为50 pA时,探测器偏压稳定在3.615...

关 键 词:红外探测器  读出电路  电流镜积分  CMOS工艺

An IR ROIC Design Based On Current Mirroring Integration
XIA Jianbao,SHAN Hui,DAI Shanshan,LUO Xiangdong. An IR ROIC Design Based On Current Mirroring Integration[J]. Journal of Electron Devices, 2011, 34(1): 57-62. DOI: 10.3969/j.issn.1005-9490.2011.01.014
Authors:XIA Jianbao  SHAN Hui  DAI Shanshan  LUO Xiangdong
Affiliation:XIA Jianbao,SHAN Hui,DAI Shanshan,LUO Xiangdong(Jiangsu Key Laboratory of ASIC Design,Nantong University,Nantong Jiangsu 226019,China)
Abstract:By analyzing the working principle and noise of current mirroring integration(CMI)readout circuit,a CMI structure is designed here.The CMI readout circuit is simulated and implemented using CSMC 0.5 μm CMOS integrated technology.The simulated results show that the circuit provides a maximum charge storage capacity of 6.25×107 electrons for a 2pF integration capacitance and 5 V power supply,the detector bias voltage is stable at 3.615 mV for 50 pA detector current,and the noise of the designed CMI circuit is 3.451 nsqV/Hz for 1 kHz frequency,even more,the structure has a large linearity no less than 99% in integration and two paths of differential output circuit.
Keywords:infrared detectors  readout circuit  CMI  CMOS technology  
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