| 磁控溅射NiO/ZnO透明异质结二极管及其光电特性研究 |
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| 引用本文： | 张国宏,祁康成,权祥,文永亮.磁控溅射NiO/ZnO透明异质结二极管及其光电特性研究[J].电子器件,2011,34(1):33-35. |
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| 作者姓名： | 张国宏 祁康成 权祥 文永亮 |
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| 作者单位： | 电子科技大学光电信息学院; |
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| 基金项目： | 四川省应用基础研究项目资助(2009JY0054)“ZnO/a-Si异质结太阳能电池研究” |
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| 摘 要： | 采用磁控溅射方法在ITO玻璃基板上沉积NiO,ZnO,AZO三层透明氧化物薄膜,成功制备了NiO/ZnO透明异质结二极管.实验结果表明,PN结展示出明显的I-V整流特性,正向开启电压1V;在氙灯光照条件下,二极管反向电流在5V偏置时,达到1.5 mA.二极管在可见光的平均透过率约为25%.
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| 关 键 词： | 磁控溅射NiO/ZnO 异质结二极管 |
NiO/ZnO hetero-junction diode by magnetron sputtering and their optoelectrical characteristics* |
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| ZHANG Guohong,QI Kangcheng,QUAN Xiang,WEN Yongliang.NiO/ZnO hetero-junction diode by magnetron sputtering and their optoelectrical characteristics*[J].Journal of Electron Devices,2011,34(1):33-35. |
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| Authors: | ZHANG Guohong QI Kangcheng QUAN Xiang WEN Yongliang |
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| Affiliation: | ZHANG Guohong,QI Kangcheng,QUAN Xiang,WEN Yongliang(School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,Chuan) |
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| Abstract: | Transparent trilayerd oxide films of NiO,ZnO,AZO were deposited on an ITO glass substrate by magnetron sputtering,and were processed to fabricate a p-NiO/n-ZnO transparent diode.The diode exhibited a clear rectifying I-V characteristic with a forward threshold voltage of 1 V.Through the application of a reverse bias of 5 V under the irradiation of Xenon lamp,the reverse current approached to 1.5 mA.The average transmittance of the diode was about 25%. |
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| Keywords: | magnetron sputtering NiO/ZnO hetero-junction diode |
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