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SRAM型FPGA总剂量效应实验研究
引用本文:姚志斌,何宝平,张凤祁,郭红霞,罗尹虹,王圆明,张科营.SRAM型FPGA总剂量效应实验研究[J].核技术,2009,32(12).
作者姓名:姚志斌  何宝平  张凤祁  郭红霞  罗尹虹  王圆明  张科营
作者单位:西北核技术研究所,西安,710613
摘    要:为了探索SRAM型FPGA器件的总剂量效应测试方法及效应敏感参数,以XC2S100为实验样品,设计了两种配置电路,利用~(60)Co γ辐照装置进行了总剂量效应辐照实验.通过对实验结果的分析,给出了SRAM型FPGA器件配置存储器及块存储器的测试流程,并指出功耗电流是表征效应的最敏感参数.这些结果对建立SRAM型FPGA的考核方法及测试方法打下了坚实的基础.

关 键 词:辐照效应  总剂量效应

An experimental study on total dose effects in SRAM-based FPGAs
YAO Zhibin,HE Baoping,ZHANG Fengqi,GUO Hongxia,LUO Yinhong,WANG Yuanming,ZHANG Keying.An experimental study on total dose effects in SRAM-based FPGAs[J].Nuclear Techniques,2009,32(12).
Authors:YAO Zhibin  HE Baoping  ZHANG Fengqi  GUO Hongxia  LUO Yinhong  WANG Yuanming  ZHANG Keying
Abstract:In order to study testing methods and find sensitive parameters in total dose effects on SRAM-based FPGA, XC2S100 chips were irradiated by ~(60)Co γ-rays and tested with two test circuit designs. By analyzing the experimental results, the test flow of configuration RAM and bock RAM was given, and the most sensitive parameter was obtained. The results will be a solid foundation for establishing test specification and evaluation methods of total dose effects on SRAM-based FPGAs.
Keywords:FPGA  FPGA  Radiation effects  Total dose effects
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