| 长波双色Al_xGa_(1-x)As/GaAs量子阱红外探测器的研制 |
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| 引用本文： | 齐利芳,李献杰,赵永林,尹顺政,蔡道民,李宁,甄红楼,熊大元,陆卫. 长波双色Al_xGa_(1-x)As/GaAs量子阱红外探测器的研制[J]. 微纳电子技术, 2009, 46(7). DOI: 10.3969/j.issn.1671-4776.2009.07.003 |
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| 作者姓名： | 齐利芳 李献杰 赵永林 尹顺政 蔡道民 李宁 甄红楼 熊大元 陆卫 |
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| 作者单位： | 1. 中国电子科技集团公司,第十三研究所,石家庄,050051
2. 中国科学院,海技术物理研究所,上海,200083 |
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| 摘 要： | 介绍了长波双色AlxGa1-xAs/GaAs多量子阱红外探测器单元的设计、制作和测试。器件光敏面面积为300μm×300μm,光吸收峰值波长分别为10.8、11.6μm;采用垂直入射光耦合的工作模式,65K温度2V偏压下,两个多量子阱区的暗电流分别为4.23×10-6、4.19×10-6A;黑体探测率分别为1.5×109、6.7×109cm.Hz1/2/W;响应率分别为0.063、0.282A/W。GaAs基量子阱红外探测器(QWIP)材料生长和加工工艺成熟、大面积均匀性好、成本低、不同波段之间的光学串音小,使得AlGaAs/GaAsQWIP在制作多色大面阵方面具有明显的优势。
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| 关 键 词： | 量子阱 红外探测器 双色 双周期光栅 长波 |
Development of a Long Wavelength Two-Color Al_xGa_(1-x)As/GaAs Quantum Well Infrared Photo-Detector |
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| Qi Lifang,Li Xianjie,Zhao Yonglin,Yin Shunzheng,Cai Daomin,Li Ning,Zhen Honglou,Xiong Dayuan,Lu Wei. Development of a Long Wavelength Two-Color Al_xGa_(1-x)As/GaAs Quantum Well Infrared Photo-Detector[J]. Micronanoelectronic Technology, 2009, 46(7). DOI: 10.3969/j.issn.1671-4776.2009.07.003 |
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| Authors: | Qi Lifang Li Xianjie Zhao Yonglin Yin Shunzheng Cai Daomin Li Ning Zhen Honglou Xiong Dayuan Lu Wei |
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| Affiliation: | 1.The 13th Research Institute;CETC;Shijiazhuang 050051;China;2.Shanghai Institute of Technical Physics;CAS;Shanghai 200083;China |
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| Abstract: | The design,processing and measurement for a long wavelength two-color AlxGa1-xAs/GaAs quantum well infrared photo-detector were described.The unit structure of the photo-detector is 300 μm×300 μm.The peaks of the responsivity spectra are 10.8 μm and 11.6 μm.Using the vertical incident light,the measured dark currents of the two multi-quantum-well zones are 4.23×10-6,4.19×10-6A with a bias voltage of 2 V at 65 K,respectively.The blackbody detectivities are 1.5×109,6.7×109 cm·Hz1/2/W and the responsivities are 0.063,0.282 A/W,respectively.The AlGaAs/GaAs quantum well infrared photo-detector(QWIP)has obvious advantages in developing a large format and multiple color focal plane array due to the mature GaAs material growth and process technology,good uniformity,low cost and small optics crosstalk between the different wave bands. |
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| Keywords: | quantum well infrared photo-detector two-color bi-period grating long wavelength |
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