| Fabrication of GaN films through reactive reconstruction of magnetron sputtered ZnO／Ga2O3 |
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| 引用本文： | 高海永,庄惠照,薜成山,董志华,何建廷,刘亦安,吴玉新,田德恒.Fabrication of GaN films through reactive reconstruction of magnetron sputtered ZnO／Ga2O3[J].中南工业大学学报(英文版),2005,12(1):9-12. |
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| 作者姓名： | 高海永 庄惠照 薜成山 董志华 何建廷 刘亦安 吴玉新 田德恒 |
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| 作者单位： | SemiconductorInstitute,ShandongNormalUniversity,Ji＇nan250014,China |
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| 摘 要： | A simple and easily operated technique was developed to fabricate GaN films. GaN films possessing hexagonal wurtzite structure were fabricated on Si(111) substrates with ZnO buffer layers through nitriding Ga2O3 films in the tube quartz furnace. ZnO buffer layers and Ga3O3 films were deposited on Si substrates in turn by using radio frequncy magnetron sputtering system before the nitriding process. The structure and composition of GaN films were studied by X-ray diffraction, selected area electron diffraction and Fourier transform infrared spectrophotometer. The morphologies of GaN films were studied by scanning electron microscopy. The results show that ZnO buffer layer improves the crystalline quality and the surface morphology of the films relative to the films grown directly on silicon substrates. The measurement result of room-temperature photoluminescence spectrum indicates that the photoluminescence peaks locate at 365 nm and 422 nm.
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| 关 键 词： | Ga2O3薄膜 ZnO过渡层 氮化 GaN薄膜 |
| 收稿时间： | 18 July 2004 |
| 修稿时间： | 26 September 2004 |
Fabrication of GaN films through reactive reconstruction of magnetron sputtered ZnO/Ga2O3 |
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| Gao Hai-yong , Zhuang Hui-zhao , Xue Chen-shan , Dong Zhi-hua , He Jian-ting , Liu Yi-an , Wu Yu-xin and Tian De-heng.Fabrication of GaN films through reactive reconstruction of magnetron sputtered ZnO/Ga2O3[J].Journal of Central South University of Technology,2005,12(1):9-12. |
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| Authors: | Gao Hai-yong Zhuang Hui-zhao Xue Chen-shan Dong Zhi-hua He Jian-ting Liu Yi-an Wu Yu-xin and Tian De-heng |
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| Affiliation: | (1) Semiconductor Institute, Shandong Normal University, 250014 Ji’nan, China |
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| Abstract: | A simple and easily operated technique was developed to fabricate GaN films. GaN films possessing hexagonal wurtzite structure
were fabricated on Si(111) substrates with ZnO buffer layers through nitriding Ga2O3 films in the tube quartz furnace. ZnO buffer layers and Ga3O3 films were deposited on Si substrates in turn by using radio frequency magnetron sputtering system before the nitriding process.
The structure and composition of GaN films were studied by X-ray diffraction, selected area electron diffraction and Fourier
transform infrared spectrophotometer. The morphologies of GaN films were studied by scanning electron microscopy. The results
show that ZnO buffer layer improves the crystalline quality and the surface morphology of the films relative to the films
grown directly on silicon substrates. The measurement result of room-temperature photoluminescence spectrum indicates that
the photoluminescence peaks locate at 365 nm and 422 nm.
Foundation item: Projects(90301002, 90201025) supported by the National Natural Science Foundation of China |
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| Keywords: | fabrication Ga2O3 film ZnO buffer layer radio frequency magnetron sputtering nitriding |
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