SiGe pMOSFET's with gate oxide fabricated by microwave electroncyclotron resonance plasma processing |
| |
Authors: | Li P.W. Yang E.S. Yang Y.F. Chu J.O. Meyerson B.S. |
| |
Affiliation: | Dept. of Electr. Eng., Columbia Univ., New York, NY; |
| |
Abstract: | A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One μm Al gate Si0.86Ge0.15 p-metal-oxide-semiconductor field-effect-transistors (pMOSFET's) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm2/V-s at 300 K and 530 cm 2/V-s at 77 K have been obtained |
| |
Keywords: | |
|
|