High-performance 1.3 /spl mu/m InGaAs vertical cavity surface emitting lasers |
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| Authors: | Sundgren P von Wurtemberg RM Berggren J Hammar M Ghisoni M Oscarsson V Odling E Malmquist J |
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| Affiliation: | Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden; |
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| Abstract: | A report is presented on high-performance InGaAs/GaAs double quantum well vertical cavity surface emitting lasers (VCSELs) with record long emission wavelengths up to 1300 nm. Due to a large gain-cavity detuning these VCSELs show excellent temperature performance with very stable threshold current and output power characteristics. For 1.27 /spl mu/m singlemode devices the threshold current is found to decrease from 2 to 1 mA between 10 and 90/spl deg/C, while the peak output power only drops from 1 to 0.6 mW. Large-area 1300 nm VCSELs show multimode output power close to 3 mW. |
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