Bi-CMOS双极型晶体管的研制

本文论述了在常规CMOS工艺下制作Bi-CMOS双极型晶体管的设计方法及制造工艺.首先通过对Bi-CMOS双极型晶体管版图结构的分析,探讨了工作机理,阐明了采用标准CMOS工艺制作高性能Bi-CMOS双极型晶体管的设计方法.然后,建立了分析计算晶体管直流特性的数学模型,并分析计算了工艺参数、器件结构对器件性能的影响,给出了CMOS工艺全兼容的Bi-CMOS双极型npn晶体管的最佳设计方案.采用常规p阱CMOS工艺进行了投片试制.测试结果表明,器件性能达到了设计指标;器件的电流增益在200以上,与理论计算完全一致.

Development of a Bi-CMOS Bipolar Transistor

This paper discusses the design technique and manufacture process of a Bi-CMOS bipolar transistor using conventional CMOS technology. Firstly, the Bi-CMOS bipolar transistor layout structure is analysed and the operation principle is studied. Thus, the design method for making a high performance Bi-CMOS bipolar transistor is given with standard CMOS process. Then, DC characteristics of the transistor are described by using a mathematical model, the calculated current gain is obtained and an optimal design scheme of a Bi-CMOS npa bipolar transistor fully-compatible with CMOS process is presented. In addition, the experimental chips are produced using conventional p-well CMOS process. The current gain of more than 200 has been measured out, which is in a good agreement with the theory.