| PECVD法淀积TiSi_2薄膜性质及应用研究 |
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| 引用本文： | 杨林安 周南生. PECVD法淀积TiSi_2薄膜性质及应用研究[J]. 固体电子学研究与进展, 1990, 10(3): 313-316 |
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| 作者姓名： | 杨林安 周南生 |
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| 作者单位： | 西安电子科技大学(杨林安，周南生)，西安电子科技大学(严北平) |
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| 摘 要： | 利用平板电容耦合式PECVD设备淀积TiSi_2薄膜,经800℃,30分钟的扩散炉退火,TiSi_x形成稳定的TiSi_2.用俄歇电子能谱和X射线衍射来监测硅化物的形成.用扫描电子显微镜观察了TiSi_2薄膜的等离子刻蚀情况.分别采用I—V法和C—V法测量了TiSi_2/Si接触的肖特基势垒高度.利用圆形传输线模型外推法求得了TiSi_2/Si引的接触电阻率,这比同样条件下Al/Si的接触电阻率低一个数量级以上.
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| 关 键 词： | TiSi薄膜 PECVD淀积 等离子刻蚀 |
A Study on Properties and Applications of TiSi_2 Thin Film Prepared by PECVD |
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| Abstract: | TiSi2 thin filims were prepared by PECVD and annealed at 800℃ for 30 min. Auger-electron spectroscopy and X-ray diffraction were used to monitor the silicide-formation reaction. The characteristics of plasma etching were observed by scanning electron microscopy. The Schottky barrier heights of TiSi2 on both n-type Si (100) and p-type Si(111) have been measured with the use of current-voltage and capacitance-voltage techniques. By extrapolation method of circular transmission line model, the contact resistivity of TiSi2/Si structure has been obtained, one order of magnitude lower than that of Al/Si under the same conditions. |
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