| 单相SVPWM窄脉冲的消除研究 |
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| 引用本文： | 张展,高照阳,张宏恩.单相SVPWM窄脉冲的消除研究[J].电子测量技术,2017,40(8):120-124. |
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| 作者姓名： | 张展 高照阳 张宏恩 |
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| 作者单位： | 河南理工大学电气工程与自动化学院 焦作 454000,河南理工大学电气工程与自动化学院 焦作 454000,河南理工大学电气工程与自动化学院 焦作 454000 |
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| 摘 要： | 在分析单相电压空间矢量脉宽调制(SVPWM)的原理以及窄脉冲对绝缘栅双极型晶体管(IGBT)的危害的基础上,针对脉宽调制中产生的驱动窄脉冲与关断窄脉冲使IGBT或体二极管在未完全开通时又立刻关断的过程中,器件产生关断电压尖峰和振荡,使得功率开关器件损坏以及在变流中引起的输出波形畸变等问题,通过对调制度M设计的方法,来控制产生的触发驱动脉冲的宽度,达到限制和消除窄脉冲的出现.最后通过Matlab仿真验证了此方法可以使开关器件躲过允许的窄脉冲,增加了电路安全运行的可靠性.
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| 关 键 词： | 脉宽调制 窄脉冲 绝缘栅双极型晶体管 |
Research of eliminated narrow pulse of single phase SVPWM |
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| Zhang Zhan,Gao Zhaoyang and Zhang Hongen.Research of eliminated narrow pulse of single phase SVPWM[J].Electronic Measurement Technology,2017,40(8):120-124. |
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| Authors: | Zhang Zhan Gao Zhaoyang and Zhang Hongen |
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| Affiliation: | School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo 454000, China,School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo 454000, China and School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo 454000, China |
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| Abstract: | On the basis of analyzing the principle of single phase voltage space vector pulse width modulation (SVPWM) and narrow pulse on the damage of insulated gate bipolar transistor (IGBT),to solve the problem that the IGBT or the body diode cut off again before they are completely open because of the narrow pulse generated in pulse width modulated.During this process,the great voltage and oscillation do damage to the device and distorted the flow in converter.The method is proposed in this paper by adjusting the modulation index m to control the width to limit and eliminate the narrow pulse.It also increases the reliability of the safe operation of the circuit.Finally the method is verified by Matlab simulation can make switching devices allow through narrow pulse to increase the reliability of the safe operation of the circuit. |
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| Keywords: | pulse width modulation narrow pulse insulated gate bipolar transistor |
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