| InP基PIN开关二极管结构设计与制备 |
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| 引用本文： | 赵艺丹,孙浩,张祁莲,孙晓玮.InP基PIN开关二极管结构设计与制备[J].电子测量技术,2017,40(11):21-24. |
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| 作者姓名： | 赵艺丹 孙浩 张祁莲 孙晓玮 |
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| 作者单位： | 1.中国科学院上海微系统与信息技术研究所 上海 200050； 2.上海科技大学 上海 201210,中国科学院上海微系统与信息技术研究所 上海 200050,中国科学院上海微系统与信息技术研究所 上海 200050,中国科学院上海微系统与信息技术研究所 上海 200050 |
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| 摘 要： | 开关二极管是微波控制电路中的一种应用最普遍的控制器件,它可以实现近似短路和开路的功能.Ⅰ层厚度对PIN二极管的器件特性具有重要的影响.利用Silvaco TCAD软件对InP基PIN开关二极管器件结构进行建模仿真,分析不同1区厚度对二极管的电流电压特性的影响,得出最优值.利用化合物半导体材料外延与器件工艺平台,制备出InP基PIN开关二极管器件,直流特性测试结果表明,PIN开关二极管的开启电压为0.525 V,反向击穿电压大于12 V.为进一步实现毫米波开关电路奠定了基础.
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| 关 键 词： | PIN 开关二极管 InP IV特性 物理模型 |
Structural design andfabrication of InP based PIN switching diode |
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| Zhao Yidan,Sun Hao,Zhang Qilian and Sun Xiaowei.Structural design andfabrication of InP based PIN switching diode[J].Electronic Measurement Technology,2017,40(11):21-24. |
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| Authors: | Zhao Yidan Sun Hao Zhang Qilian and Sun Xiaowei |
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| Affiliation: | 1.Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China; 2. Shanghai Tech University, Shanghai 201210, China,Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China,Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China and Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China |
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| Abstract: | Switching diodes are a kind of the most widely used in microwave control circuits of control devices,and it can obtain the good performance of short circuit and open circuit.The thickness of Ⅰ region has an important effect on the characteristics of PIN diodes device.In this paper,the structure of InP-base PIN switching diode device is modeled bySilvaco TCAD software,and then analyze the influence of different Ⅰ region thickness on the current and voltage characteristics of the diode and obtain the optimal value.Usingcompound semiconductor materials epitaxy and device technology platform,InP-base PIN switching diode device is prepared,and the test results of DC characteristics show that,the turn on voltage of PIN switching diode is 0.525 V,and the reverse breakdown voltage is larger than 12 V,which has laid a foundation for further realizing the millimeter wave switching circuits. |
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| Keywords: | PIN switchingdiode InP IV characteristics physics based model |
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