Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires |
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Authors: | Sepideh Gorji Ghalamestani Martin Ek Bahram Ganjipour Claes Thelander Jonas Johansson Philippe Caroff Kimberly A Dick |
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Affiliation: | Solid State Physics, Lund University , Box 118, SE-22100 Lund, Sweden. |
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Abstract: | The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga(x)In(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to ~0.3. Interestingly, the growth rate of the Ga(x)In(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure regardless of composition. Finally, electrical characterization on nanowire material with a composition of Ga(0.6)In(0.4)Sb showed clear p-type behavior. |
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