Formation of ordered groups of quantum dots during Ge/Si heteroepitaxy

A new approach to the creation of circularly ordered Ge nanoislands by epitaxy on the surface of a heterophase structure consisting of a Si(100) substrate with premade seeds in the form of SiGe nanodisks or SiGe nanorings is developed. It is shown that the spatial configuration of islands in the group is due to the nucleation of the islands in the area of local minima of the elastic energy density on the surface of a circular seed. On the basis of this approach, a number of multilayer structures with vertically aligned ring groups of quantum dots were grown. The elemental composition and luminescent properties of the ordered structures are studied.