| 硫分压对光吸收层CuInS2薄膜性能的影响 |
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| 引用本文： | 阎有花,刘迎春,方 玲,卢志超,周少雄,李正邦.硫分压对光吸收层CuInS2薄膜性能的影响[J].稀有金属材料与工程,2009,38(5):838-841. |
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| 作者姓名： | 阎有花 刘迎春 方 玲 卢志超 周少雄 李正邦 |
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| 作者单位： | 中国钢研科技集团公司安泰科技股份有限公司,北京,100081 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 在不同硫分压r (r=Sn/N2+Sn])下,采用Cu-In预制膜硫化法制备了CuInS2薄膜.用扫描电子显微镜、X射线衍射仪、霍尔测试仪、紫外-可见光分光光度计对薄膜的表面形貌、结构、电学、光学性能进行了表征分析.结果表明:随着r增加,薄膜的结晶质量提高,当r＝1/2时,晶粒大小如一,粒度保持在1 μm左右,沿112]晶向择优生长,载流子浓度为5.6×1016 cm-3,光学带隙在1.53 eV左右.
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| 关 键 词： | CuInS2薄膜 硫化法 硫分压 微结构 |
| 收稿时间： | 2008/5/25 0:00:00 |
Effect of Sulfur Partial Pressure on Properties of CuInS2 Absorber Films |
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| Yan Youhu,Liu Yingchun,Fang Ling,Lu Zhichao,Zhou Shaoxiong and Li Zhengbang.Effect of Sulfur Partial Pressure on Properties of CuInS2 Absorber Films[J].Rare Metal Materials and Engineering,2009,38(5):838-841. |
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| Authors: | Yan Youhu Liu Yingchun Fang Ling Lu Zhichao Zhou Shaoxiong and Li Zhengbang |
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| Affiliation: | Advanced Technology & Materials Co.;Ltd.;China Iron & Steel Research Institute Group;Beijing 100081;China |
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| Abstract: | CuInS2 (CIS) films were prepared by electrodepositing-sulfurization at the different partial pressures of sulfur r(r=Sn/N2+Sn]). Their surface morphologies, crystalline structure, electrical and optical properties were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall system and ultraviolet-visible (UV-VIS) spectraphotometers, respectively. The results show that the crystalline quality is improved with increasing of r. It is found that the CuInS2 film sulfurized at r=1/2 wi... |
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| Keywords: | CuInS2 thin film sulfurization method sulfur partial pressure microstructure |
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