| GaN-MOCVD系统反应室流场的数值仿真 |
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| 引用本文： | 白俊春,李培咸,郝跃,杜阳. GaN-MOCVD系统反应室流场的数值仿真[J]. 电子科技, 2009, 22(5) |
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| 作者姓名： | 白俊春 李培咸 郝跃 杜阳 |
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| 作者单位： | 西安电子科技大学技术物理学院,陕西,西安,710071;西安电子科技大学微电子学院,陕西,西安,710071 |
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| 摘 要： | 针对某高校自主研发的120型GaN-MOCVD系统反应室的流场,进行了计算流体力学(CFD)数值模拟.在模拟过程中,讨论分析了运行参数和反应室结构尺寸的变化对反应室内流场、压力场和温度场的影响及对工艺条件的优化.模拟结果表明,数值仿真对MOCVD设备的结构设计及调试运行具有重要的指导和辅助作用.
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| 关 键 词： | GaN-MOCVD CFD 数值模拟 |
Numerical Simulation of Flow Patterns in the GaN-MOCVD Reactor |
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| Bai Junchun,Li Peixian,Hao Yue,Du Yang. Numerical Simulation of Flow Patterns in the GaN-MOCVD Reactor[J]. Electronic Science and Technology, 2009, 22(5) |
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| Authors: | Bai Junchun Li Peixian Hao Yue Du Yang |
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| Affiliation: | 1.School of Technical Physics;Xidian University;Xi'an 710071;China;2.School of Microelectronics;China |
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| Abstract: | The flow of 120-GaN-MOCVD system response room developed by an university independently is simulated based on Computational Fluid Dynamics(CFD).In the simulation process,the effect upon the flow of response room and pressure and temperature fields of the changes of operating parameters and response room size is analyzed and the process conditions are optimized.Simulation results show that numerical simulation is of great significance for design and debugging of the structure of MOCVD devices. |
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| Keywords: | GaN-MOCVD CFD |
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