Creation of stable nanoconstrictions in metallic thin films via progressive narrowing by focused-ion-beam technique and in situ control of resistance |
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| Authors: | J. Vincenc Oboňa J.M. de Teresa R. Córdoba A. Fernández-Pacheco M.R. Ibarra |
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| Affiliation: | 1. Center for Semiconductor Component, University of Campinas (UNICAMP), Rua João Pandia Calógeras, 90 Campinas, CEP: 13083-870 São Paulo, Brazil;2. Federal University of ABC (UFABC), Rua Santa Adélia 166, Bangu, Santo André, CEP: 09210-170 São Paulo, Brazil;1. Institute of Optical Materials and Technologies “Acad. J. Malinowski”, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 109, 1113 Sofia, Bulgaria;2. Institute of Macromolecular Chemistry of Czech Academy of Science, Heyrovsky sq. 2, 162 06 Prague 6, Czech Republic;3. Faculty of Chemical Technology, University of Pardubice, Studentská 84, 532 10 Pardubice, Czech Republic |
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| Abstract: | This work describes the use of focused-ion-beam for the fabrication of metallic nanoconstrictions on a Fe thin film with in situ monitoring of the structure’s resistance. With this approach the sequential FIB steps that are used for the gradual narrowing of the nanoconstriction are observed as changes in the measured resistance, thus providing very good control of the milling process. The FIB patterning enables precise termination of the process just before the crossover between the metallic and tunneling regimes near the conductance quantum value G0 (G0 = 2e2/h). Compared to previous approaches to create nanoconstrictions with focused-ion-beam, this new technique determines precisely the current direction and minimizes Ga damage at the nanoconstriction. |
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