High robustness of correlation-based alignment with Penrose patterns to marker damage in electron beam lithography |
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| Authors: | KE Docherty KA Lister J Romijn JMR Weaver |
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| Affiliation: | 1. James Watt Nanofabrication Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Oakfield Avenue, Glasgow G12 8LT, UK;2. Center of MicroNanoTechnology, École Polytechnique, Fédéral du Lausanne, CH-1015 Lausanne, Switzerland;3. Vistec Lithography BV, De Dintel 27a, 5684 PS Best, The Netherlands;1. Institute for Nuclear Research of Russian Academy of Sciences, prospekt 60-letiya Oktyabrya 7a, Moscow 117312, Russian Federation;2. Moscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, Moscow Region, 141700, Russian Federation;1. State Key Laboratory of Transient Optics and Photonics, Xi?an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi?an, China;2. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, China;1. Federal State Autonomous Educational Institution of Higher Education, Belgorod National Research University, 85 Pobeda Str., Belgorod, 308015, Russia;2. Departamento Ingeniería Eléctrica - SEES, CINVESTAV, Mexico;1. School of Information Engineering, Guangdong University of Technology, Guangzhou 510006, PR China;2. Department of Physics, College of Physics and Electrical Engineering, Guangzhou University, Guangzhou 510006, PR China |
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| Abstract: | Correlation-based alignment is an alternative alignment method for electron beam lithography. Using complex marker patterns, such as Penrose patterns, which contain more positional information, greater alignment accuracy can be achieved. Correlation-based alignment with Penrose patterns is less susceptible to marker edge defects, such as rat bites, roughness and flagging, since many more edges contribute to determining the marker position. There are however other defects associated with fabricating markers and this paper investigates how defects that result in parts of the pattern being omitted or obscured affect the correlation process when using Penrose pattern markers. We show that in both cases severely damaged markers can be used successfully and demonstrate fabricated structures with sub-5 nm alignment using markers with up to 80% of the marker pattern missing. |
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