首页 | 本学科首页   官方微博 | 高级检索  
     


22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool
Authors:Patrick P Naulleau  Christopher N Anderson  Jerrin Chiu  Paul Denham  Simi George  Kenneth A Goldberg  Michael Goldstein  Brian Hoef  Russ Hudyma  Gideon Jones  Chawon Koh  Bruno La Fontaine  Andy Ma  Warren Montgomery  Dimitra Niakoula  Joo-on Park  Tom Wallow  Stefan Wurm
Affiliation:1. Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;2. SEMATECH, Albany, NY 12203, USA;3. Advanced Micro Devices, Sunnyvale, CA 94088, USA;4. Intel Corporation, Santa Clara, CA 95052, USA;5. Hyperion Development LLC, San Ramon, CA 94582, USA;6. Samsung Electronics, Hwasung-city, Gyeonggo-Do 445-701, Korea;1. Department of Psychiatry, Icahn School of Medicine at Mount Sinai, New York, NY 10029, USA;2. Department of Psychiatry and Behavioral Sciences, Duke University, Durham, NC 27710, USA;3. Department of Psychology & Neuroscience, Duke University, Durham, NC 27708, USA;4. Department of Psychiatry, Columbia University, New York, NY 10032, USA;5. National Institute of Mental Health, National Institutes of Health, Bethesda, MD 20892, USA;6. Department of Biomedical Engineering, Columbia University, New York, NY 10027, USA;7. Department of Biomedical Engineering, Duke University, Durham, NC 27708, USA;8. Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA;1. IK4-TEKNIKER, Polo Tecnológico de Eibar, Calle Iñaki Goenaga, 5, 20600 Eibar, Guipuzcoa, Spain;2. Group of Optics, Applied Physics Department, University of Cantabria, Avda. de los Castros, Spain;1. Institute of Nanoscience and Nanotechnology, NCSR “Demokritos”, Patriarhou Gregoriou and Neapoleos 27, 153 41, Aghia Paraskevi, Greece;2. Department of Chemistry, University of Athens, 157 71 Athens, Greece;1. Changchun University of Science and Technology, JR3CN & CNM, Changchun 130022, China;2. University of Bedfordshire, JR3CN & IRAC, Luton LU1 3JU, UK;3. Xi’an Jiaotong-Liverpool University, DCSSE, Suzhou 215123, China;4. Tampere University of Technology, ORC, Tampere FIN-33101, Finland
Abstract:Microfield exposure tools continue to play a dominant role in the development of extreme ultraviolet (EUV) resists. Here we present an update on the SEMATECH Berkeley 0.3-NA microfield exposure tool and summarize the latest test results from high-resolution line-space printing. Printing down to 20-nm is presented with large process latitude at 22-nm half-pitch lines. Also presented are line-edge roughness results along with a discussion of the importance of mask contributors to line-edge roughness measured in resist. Finally we briefly describe an upgrade to the tool that will enable EUV resist development at the 16-nm half-pitch node and beyond. (This paper was presented in MNE 2008 conference, <http://www.mne08.org>, <http://www.mne-conf.org>).
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号