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Characterization of interfacial reaction and chemical bonding features of LaOx/HfO2 stack structure formed on thermally-grown SiO2/Si(1 0 0) |
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| Authors: | Akio Ohta Daisuke Kanme Hideki Murakami Seiichiro Higashi Seiichi Miyazaki |
| Affiliation: | 1. Graduate School of Engineering, Nagoya University, Nagoya, Japan;2. Venture Business Laboratory, Nagoya University, Nagoya, Japan;3. Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-hiroshima, Japan;1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;2. Green Nanoelectronics Collaborative Research Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), West 7A, Onogawa 16-1, Tsukuba, Ibaraki 305-8569, Japan;3. Research Fellow of the Japan Society for the Promotion of Science, Japan;4. Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan |
| Abstract: | A stack structure consisting of ～1.5 nm-thick LaOx and ～4.0 nm-thick HfO2 was formed on thermally grown SiO2 on Si(1 0 0) by MOCVD using dipivaloymethanato precursors, and the influence of N2 annealing on interfacial reaction for this stack structure was examined by using X-ray photoelectron spectroscopy and Fourier transform infrared attenuated total reflection. We found that compositional mixing between LaOx and HfO2 becomes significant from 600 °C upwards and that interfacial reaction between HfLayOz and SiO2 proceeds consistently at 1000 °C in N2 ambience. |
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