|
|||||
|
|
Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and subsequent annealing in CO atmosphere |
|
| Authors: | M Voelskow B Pécz J Stoemenos W Skorupa |
| Affiliation: | 1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, 01314 Dresden, Germany;2. Research Inst. for Technical Phys. and Materials Sci., H-1525 Budapest, P.O. Box 49, Hungary;3. Aristotle University of Thessaloniki, Physics Department, 54006 Thessaloniki, Greece |
| Abstract: | 3C-SiC nanocrystallites were epitaxially formed on a single crystalline Si surface covered by a 150 nm thick SiO2 capping layer after low dose carbon implantation and subsequent high temperature annealing in CO atmosphere. Carbon implantation is used to introduce nucleation sites by forming silicon–carbon clusters at the SiO2/Si interface facilitating the growth of 3C-SiC nanocrystallites. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |