Homojunction and heterojunction based on CdTe polycrystalline thin films |
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| Authors: | Lei Huang Yue Zhao Dong Cai |
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| Affiliation: | 1. Rutgers, The State University of New Jersey, Dept. of Mechanical and Aerospace Engineering, 98 Brett Road, Piscataway , NJ 08854-8058 USA;2. Brigham Young University, Dept. of Electrical & Computer Eng., 459 Clyde Building, Provo, UT 841602, USA;3. Boston College, Integrated Research Lab., Chestnut Hill, MA 02467, USA;1. Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-088, Hermosillo, Sonora, CP. 83000;2. Posgrado de Nanotecnología, Departamento de Física, Universidad de Sonora, Apdo. Postal 1626, Hermosillo, Sonora, CP. 83000 Mexico;3. Departamento de Física, Universidad de Sonora, Apdo. Postal 1626, Hermosillo, Sonora, CP. 83000;4. Centro de Investigación y Estudios Avanzados del IPN, Unidad Querétaro, Apdo. Postal 1-798, Querétaro, Qro., C.P. 76001 Mexico;1. School of Chemical Engineering, Hefei University of Technology, Hefei 230009, China;2. Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, China;1. Department of Physics, Faculty of Liberal Arts and Science, Kasetsart University Kamphaeng Saen Campus, Nakhon Pathom 73140, Thailand;2. Department of Physics and Material Sciences, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;3. ThEP Center, CHE, Bangkok 10400, Thailand;1. Collaborative Innovation Center of High-End Manufacturing Equipment, Xi’an Jiaotong University, Xi’an 710049, PR China;2. State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, PR China;1. Materials Science Program, Colorado School of Mines, Golden, CO 80401, USA;2. Department of Physics, University of Oregon, Eugene, OR 97403, USA;3. Department of Chemistry, University of Oregon, Eugene, OR 97403, USA |
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| Abstract: | The reaction growth temperature plays an important role for growing CdTe thin film on a foreign substrate by CVD. If a growth temperature is more than 560 °C, the CdTe film is a p-type. The higher growth temperature, the greater is the carrier concentration. If the growth temperatures are less than 520 °C, the CdTe films are n-type. A p-type CdTe film is firstly grown at a higher temperature, and an n-type CdTe film is then grown at a lower temperature, forming a CdTe homojunction. The properties of as-deposited CdTe homojunction are measured for the first time. In addition, a p-type CdTe film is exposed in an air environment for several weeks, forming a hybrid layer of CdO and TeO2. An ITO film is then deposited on the oxide layer, forming an n-ITO/i/p-CdTe heterojunction. At the same time, an n-ITO/p-CdTe heterojunction is also deposited by the same processes except without the oxidation treatment. The efficiency of the heterojunction solar cell with the oxidation treatment is much greater than that without the oxidation processing. |
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