Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation |
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| Authors: | Li-Jung Liu Kuei-Shu Chang-Liao Tai-Yu Wu Tien-Ko Wang Wen-Fa Tsai Chi-Fong Ai |
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| Affiliation: | 1. Department of Engineering and System Science, National Tsing Hua University, 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, ROC;2. Physics Division, Institution of Nuclear Energy Research, Taoyuan, Taiwan, ROC;1. School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea;2. Research & Development Division, SK Hynix Semiconductor Inc, Icheon, Republic of Korea;1. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;2. Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan;3. National Nano Device Laboratories, Hsinchu 30078, Taiwan;1. V.E. Lashkaryov Institute of Semiconductor Physics NASU, 41 prosp. Nauki, 03028-Kyiv, Ukraine;2. Institute of Microelectronics, NCSR ‘Demokritos’ 15310 Aghia Paraskevi, Athens, Greece |
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| Abstract: | Electrical characteristics of charge trapping-type flash devices with HfAlO charge trapping layer nitrided by plasma immersion ion implantation (PIII) technique with different implantation energies and time are studied. Utilizing Fowler–Nordheim (FN) operation, the programming speed of flash memory with charge trapping layer nitrided at low implantation energy is faster than that of control sample. The erasing speed of PIII-treated sample is slightly slower than that of control one, which might be due to the formation of silicon nitride in the tunneling oxide. The retention characteristics of all PIII-treated samples are significantly improved. Different peak locations of implanted nitrogen concentrations are formed by different implantation energies, which cause various electrical characteristics of flash devices. |
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