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Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes |
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| Authors: | Changhwan Choi Takashi Ando Eduard Cartier Martin M. Frank Ryosuke Iijima Vijay Narayanan |
| Affiliation: | 1. T.J. Watson Research Center, Research Division, IBM, 1101 Kitchawan Rd., Yorktown Heights, NY 10598, USA;2. Toshiba America Electronic Components, Albany Nanotech, Albany, NY 12203, USA;1. International Center for Materials Discovery, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, Shaanxi 710072, PR China;2. Science and Technology on Thermostructural Composite Materials Laboratory, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, Shaanxi 710072, PR China;1. Institute of Process Equipment and Control Engineering, Zhejiang University of Technology, Hangzhou, 310014, PR China;2. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, PR China;3. Shanghai Baosteel Industry Technological Service Co., Ltd., Shanghai, 201900, PR China |
| Abstract: | We present a novel metal gate/high-k complementary metal–oxide–semiconductor (CMOS) integration scheme with symmetric and low threshold voltage (Vth) for both n-channel (nMOSFET) and p-channel (pMOSFET) metal–oxide–semiconductor field-effect transistors. The workfunction of pMOSFET is modulated by oxygen in-diffusion (‘oxygenation’) through the titanium nitride metal gate without equivalent oxide thickness (EOT) degradation. A significant Vth improvement by 420 mV and an aggressively scaled capacitance equivalent thickness under channel inversion (Tinv) of 1.3 nm is achieved for the pFET by using a replacement process in conjunction with optimized oxygenation process. Immunity of nMOSFET against oxygenation process is demonstrated. |
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