Compositional dependence of work function and Fermi level position of the HfNx/SiO2 system |
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| Authors: | JA Rothschild M Eizenberg |
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| Affiliation: | 1. Energy & Materials Engineering Centre, College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, China;2. Tianjin International Joint Research Centre of Surface Technology for Energy, Storage Materials, Tianjin 300387, China;3. Tianjin Institute of Urological Surgery, Tianjin Medical University, Tianjin 300070, China |
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| Abstract: | In situ Kelvin Probe (KP) measurements performed on HfNx showed an increase of the vacuum work function as a function of N content from a value of 3.9 eV (silicon conduction band edge) for pure Hf to a value of 5 eV (silicon valence band edge) for x ～ 2. In contrast, capacitance–voltage (C–V) measurements showed that the effective work function increased only until x < 1 and saturated around a value of 4.6 eV (silicon midgap). This behavior is attributed to Fermi level pinning, which is probably due to oxidation of the HfNx during the reactive sputtering deposition step. |
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