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Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET |
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| Authors: | T. Kawanago J. Song K. Kakushima P. Ahmet K. Tsutsui N. Sugii T. Hattori H. Iwai |
| Affiliation: | 1. Belarusian State University, Nezalezhnastsi Av. 4, 220030 Minsk, Belarus;2. Research Institute for Physical Chemical Problems, Belarusian State University, 220030 Minsk, Belarus;3. Sokolsky Institute of Fuel, Catalysis and Electrochemistry, Kunaev St. 142, 050010 Almaty, Kazakhstan |
| Abstract: | We experimentally examine the effective mobility in nMOSFETs with La2O3 gate dielectrics without SiOx-based interfacial layer. The reduced mobility is mainly caused by fixed charges in High-k gate dielectrics and the contribution of the interface state density is approximately 30% at Ns = 5 × 1011 cm?2 in the low 1011 cm?2 eV?1 order. It is considered that one of the effective methods for improving mobility is to utilize La-silicate layer formed by high temperature annealing. However, there essentially exists trade-off relationship between high temperature annealing and small EOT. |
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