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Degradation dynamics and breakdown of MgO gate oxides |
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| Authors: | E. Miranda E. O’Connor G. Hughes P. Casey K. Cherkaoui S. Monaghan R. Long D. O’Connell P.K. Hurley |
| Affiliation: | 1. Belarusian State University, Nezalezhnastsi Av. 4, 220030 Minsk, Belarus;2. Research Institute for Physical Chemical Problems, Belarusian State University, 220030 Minsk, Belarus;3. Sokolsky Institute of Fuel, Catalysis and Electrochemistry, Kunaev St. 142, 050010 Almaty, Kazakhstan;1. Departament d''Enginyeria Electrònica, Universitat Autònoma de Barcelona, Spain;2. Tyndall National Institute, University College Cork, Cork, Ireland |
| Abstract: | The degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive BD in 20-nm thick films is also reported. |
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