Enhanced photoluminescence from porous silicon passivated with an ultrathin aluminum film |
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| Authors: | Hohyeong Kim Chanseok Hong Chongmu Lee |
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| Affiliation: | 1. Department of Materials Science and Engineering, Korea University, Seoul 136-713, South Korea;2. Department of Material Science & Engineering, Hanyang University, Seoul 133-791, South Korea |
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| Abstract: | The photoluminescence (PL) of the porous silicon (PS) can be enhanced by coating it with an ultrathin aluminum (Al) film. The PL intensity of PS was found to increase up to ~ 67% by radio frequency (RF) sputter deposition of 5.2 nm Al film on PS. Fourier transform infrared (FTIR) spectroscopy analysis results suggest that the PL enhancement is related to change of Si–H and Si–O–Si bonds into Si–Al bonds as well as the increase in the carrier concentration participating in the radiative recombination under photoexcitation. On the other hand, the PL of the Al-passivated PS was found to be significantly deteriorated by postannealing owing to the thermal oxidation of the Al layer during annealing. |
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