Resist thickness effects on ultra thin HSQ patterning capabilities |
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| Authors: | V. Sidorkin A. Grigorescu H. Salemink E. van der Drift |
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| Affiliation: | 1. Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft 2628 CJ, The Netherlands;2. Charged Particle Optics Group, Delft University of Technology, Lorentzweg 1, Delft 2628 CJ, The Netherlands;1. Istituto CNR di Chimica Biomolecolare, Trav. La Crucca 3, I-07040 Sassari, Italy;2. Dipartimento di Chimica e Farmacia, and Centro Interdisciplinare per lo Sviluppo della Ricerca Biotecnologica e per lo Studio della Biodiversità della Sardegna, Università di Sassari, Via Vienna 2, I-07100 Sassari, Italy;1. Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK;2. University of Southampton, Electronics and Computer Science, Highfield, Southampton SO17 1BJ, UK;1. Department of Physics, Faculty of Science, Cankiri Karatekin University, 18100 Cankiri, Turkey;2. Department of Physics, Faculty of Science, Gazi University, 06500 Ankara, Turkey;1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;3. Royal School of Mines, Imperial College London, South Kensington Campus, London SW7 2AZ, UK |
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| Abstract: | This work focuses on the effect of resist thickness on resolution performance of hydrogen silsesquioxane (HSQ) electron beam resist. Contrast, sensitivity, surface morphology and resolution of the formed structures were found to be substantially dependent on film thickness. Method of resist drying in vacuum at room temperature was found to reduce surface roughness of ultra thin HSQ films compared to hot plate drying at 90 °C in air. Results of Monte Carlo simulations of the exposure process are in good agreement with proposed mechanism of sensitivity loss and structure linewidth broadening with increase of resist thickness. |
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